IPP096N03L G

IPP096N03L G Type IPB096N03L G OptiMOS®3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS(on),max 9.6 m: • Optimized technology for DC/DC converters ID 35 A • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant Type IPP096N03L G IPB096N03L G Package PG-TO220-3 PG-TO263-3 Marking 096N03L 096N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 35 V GS=10 V, T C=100 °C 35 V GS=4.5 V, T C=25 °C 35 V GS=4.5 V, T C=100 °C 30 Unit A Pulsed drain current2) I D,pulse T C=25 °C 245 Avalanche current, single pulse 3) I AS T C=25 °C 35 Avalanche energy, single pulse E AS I D=12 A, R GS=25 : 40 mJ Reverse diode dv /dt dv /dt I D=35 A, V DS=24 V, di /dt =200 A/μs, T j,max=175 °C 6 kV/μs Gate source voltage V GS 1) ±20 V J-STD20 and JESD22 Rev. 1.02 page 1 2007-08-29 IPP096N03L G IPB096N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 42 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 3.6 minimal footprint - - 62 6 cm² cooling area 4) - - 40 30 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 μA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 11.3 14.1 m: V GS=10 V, I D=30 A - 8.0 9.6 - 1.1 - : 26 53 - S Gate-source leakage current Drain-source on-state resistance 5) Gate resistance RG Transconductance g fs 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=30 A V μA 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 1.02 page 2 2007-08-29 IPP096N03L G IPB096N03L G Parameter Values Symbol Conditions Unit min. typ. max. - 1200 1600 - 500 660 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 24 - Turn-on delay time t d(on) - 4.0 - Rise time tr - 3.2 - Turn-off delay time t d(off) - 16 - Fall time tf - 2.6 - Gate to source charge Q gs - 4.0 - Gate charge at threshold Q g(th) - 1.9 - Gate to drain charge Q gd - 1.8 - Switching charge Q sw - 3.9 - Gate charge total Qg - 7.4 - Gate plateau voltage V plateau - 3.4 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 15 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 6.4 - Output charge Q oss V DD=15 V, V GS=0 V - 13 - - - 35 - - 245 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 : pF ns Gate Charge Characteristics 5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.94 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/μs - - 10 nC 6) T C=25 °C A See figure 16 for gate charge parameter definition Rev. 1.02 page 3 2007-08-29 IPP096N03L G IPB096N03L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS•10 V 50 40 40 30 I D [A] P tot [W] 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 μs 10 0.5 2 10 μs 1 0.2 Z thJC [K/W] I D [A] 100 μs DC 10 1 1 ms 0.1 0.05 0.02 0.01 0.1 10 ms single pulse 100 10-1 10-1 0.01 100 101 102 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.02 0 10-6 page 4 2007-08-29 IPP096N03L G IPB096N03L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 24 5V 3.2 V 20 10 V 3.5 V 120 4V 80 16 R DS(on) [m:] I D [A] 4.5 V 4V 4.5 V 12 5V 10 V 8 11.5 V 40 3.5 V 4 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 80 80 60 60 I D [A] g fs [S] 100 40 40 20 20 175 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 1.02 0 20 40 60 I D [A] V GS [V] page 5 2007-08-29 IPP096N03L G IPB096N03L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 μA 18 2.5 16 2 14 1.5 98 % V GS(th) [V] R DS(on) [m:] 12 10 typ 8 1 6 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C Ciss 103 Coss 25 °C, 98% 175 °C, 98% I F [A] C [pF] 100 102 175 °C Crss 10 10 1 100 1 0 10 20 30 Rev. 1.02 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2007-08-29 IPP096N03L G IPB096N03L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 : V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 6V 10 8 V GS [V] I AV [A] 25 °C 24 V 100 °C 10 150 °C 6 4 2 1 0 10-1 100 101 102 103 0 5 t AV [μs] 10 15 20 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.02 page 7 2007-08-29 IPP096N03L G IPB096N03L G Package Outline PG-TO220-3 Packaging: Rev. 1.02 page 8 2007-08-29 IPP096N03L G IPB096N03L G Package Outline Rev. 1.02 PG-TO263-3 page 9 2007-08-29 IPP096N03L G IPB096N03L G Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 10 2007-08-29